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MAX17600–MAX17605
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
V DD , INA, INB, ENA, ENB to GND ........................-0.3V to +16V
OUTA, OUTB to GND ............................................-0.3V to +16V
Junction Operating Temperature Range ......... -40 N C to +125 N C
Continuous Power Dissipation (T A = +70 N C)
8-Pin TDFN (derate 23.8mW/ N C above +70 N C) ........1904mW
Operating Temperature Range ........................ -40 N C to +125 N C
Junction Temperature ................................................... +150 N C
Storage Temperature Range............................ -65 N C to +150 N C
Lead Temperature (soldering, 10s) ................................+300 N C
Soldering Temperature (reflow) ......................................+240 N C
8-Pin SO (derate 74mW/ N C above +70 N C)............. 588.2mW*
8-Pin F MAX (derate 12.9mW/ N C above +70 N C) .....1030.9mW
*As per JEDEC 51 standard.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance ( B JA ) ..........42 N C/W
Junction-to-Case Thermal Resistance ( B JC ) .................8 N C/W
SO
F MAX
Junction-to-Ambient Thermal Resistance ( B JA ) .......77.6 N C/W
Junction-to-Case Thermal Resistance ( B JC ) .................5 N C/W
Junction-to-Ambient Thermal Resistance ( B JA ) ........136 N C/W
Junction-to-Case Thermal Resistance ( B JC ) ...............38 N C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V DD = 12V, C L = 0F, at T A = -40 N C to +125 N C, unless otherwise noted. Typical values are specified at T A = +25 N C. Parameters
specified at V DD = 4V apply to the TTL versions only.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY (V DD )
V DD Operating Range
V DD
TTL versions
HNM versions
4
6
14
14
V
V DD Undervoltage Lockout
UVLO
V DD rising
3
3.5
3.85
V
V DD UVLO Hysteresis
200
mV
V DD UVLO to OUT_ Delay
IDD_Q
V DD rising
Not switching, V DD = 14V (Note 3)
120
1
2
F s
V DD Supply Current
IDD_SW
V DD = 4.5V, C L = 1nF, both channels
switching at 1MHz
12
18
mA
DRIVER OUTPUT (SOURCE) (OUTA, OUTB)
Peak Output Current (Sourcing)
I PK-P
V DD = 14V, C L = 10nF (Note 3)
4
A
Driver Output Resistance Pulling Up
(Note 4)
R ON-P
V DD = 14V, I OUT_ = 100mA
V DD = 4V, I OUT_ = 100mA
0.88
0.91
1.85
1.95
I
DRIVER OUTPUT (SINK) (OUTA, OUTB)
Peak Output Current (Sinking)
I PK-N
V DD = 14V, C L = 10nF (Note 3)
4
A
Driver Output Resistance Pulling
Down (Note 4)
R ON-N
V DD = 14V, I OUT_ = -100mA
V DD = 4V, I OUT_ = -100mA
0.5
0.52
0.95
1
I
2
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